Energy-efficient spintronic devices require the following two criteria: (1) a large spin-orbit torque (SOT) and (2) low damping to excite magnetic precession with low current input. Conventional ferromagnet/nonmagnetic-metal bilayers can obtain sizeable SOTs; however, this comes at the expense of drastically increasing the damping. Because the origin or the transmission of spin is interfacial in nature, the ferromagnetic layer must be restricted to ∼1nm in thickness to see substantial SOTs. Here, we present an alternative approach to producing sizeable SOTs that allows for a thicker ferromagnetic layer maintaining low damping. Instead of relying on a single interface, we continuously break the bulk inversion symmetry with a vertical compositional gradient of two ferromagnetic elements: Fe with low intrinsic damping and Ni with sizable spin-orbit coupling. We find low effective damping parameters of αeff < 5 × 10−3 in the FeNi alloy films, despite the steep compositional gradients. Moreover, we reveal a sizable anti-damping SOT efficiency of θAD ≈ 0.05, even without an intentional compositional gradient. Through depth-resolved x-ray diffraction, we identify a lattice strain gradient as crucial symmetry breaking that underpins the SOT. Our findings provide fresh insights into damping and SOTs in single-layer ferromagnets for power-efficient spintronic devices.
The spin Seebeck effect (SSE) has been widely studied as a potential mechanism for energy harvesting. However, the efficiency of such devices, utilizing the spin thermoelectric effect in thin film form, has not yet reached a sufficient value to make them economically viable. It is therefore imperative that advances are made to investigate means by which the thermoelectric signal can be enhanced. Multilayers of Co2MnSi and Pt are fabricated and characterized in an attempt to observe enhanced voltages. We report that bilayers of ferromagnetic conductor/normal metal (FM/NM) exhibit a Longitudinal SSE response and that repetitive stacking of such bilayers results in an increased thermoelectric voltage that is highly dependent upon the quality of CMS/Pt and Pt/CMS interfaces.
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