This work emphasizes on the comparative study of tin based group IV single and multiple quantum well photodetector in absence of light. Initially, the designs of the single quantum well infrared photodetector (SQWIP) and multiple quantum well infrared photodetector (MQWIP) are proposed and explained along with considerations. Dark current and detectvity is calculated by using rate equations considering carrier transfer mechanism in MQWIP and SQWIP. The result reveals that dark current in the order of microampere is obtained for SQWIP but it can be reduced by increasing number wells. Significant peak detectivity in the range of 109 cm Hz1/2 W-1 is obtained for MQWIP at lower bias which is higher than that of SQWIP. However judicious selection of proper bias and number of well is required for optimized operation of MQWIP.
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