Ellipsometry on optically thin palladium films on silicon-based substrate: effects of low concentration of hydrogen

Emmanouil Lioudakis; Andreas Othonos

doi:10.1117/1.1840955

1 February 2005 Ellipsometry on optically thin palladium films on silicon-based substrate: effects of low concentration of hydrogen

Emmanouil Lioudakis, Andreas Othonos

Author Affiliations +

Optical Engineering, Vol. 44, Issue 2, 023802 (February 2005). https://doi.org/10.1117/1.1840955

Abstract

Optically thin palladium films evaporated on silicon substrates are investigated following exposure to low concentrations of hydrogen gas in nitrogen using spectroscopic ellipsometry. Changes in the parameters tan Ψ and cos Δ are observed for concentrations as low as 0.01% hydrogen in nitrogen. A nonlinear behavior of the change in the ellipsometry parameters as a function of hydrogen concentration is demonstrated, with saturation occurring at a flow of 0.05% hydrogen in nitrogen.

©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Emmanouil Lioudakis and Andreas Othonos "Ellipsometry on optically thin palladium films on silicon-based substrate: effects of low concentration of hydrogen," Optical Engineering 44(2), 023802 (1 February 2005). https://doi.org/10.1117/1.1840955

Published: 1 February 2005

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