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9 March 2024 Material properties and applications of InAs/InAsSb type-II superlattice in IR lasers and photodetectors
Yong-Hang Zhang
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Proceedings Volume PC12895, Quantum Sensing and Nano Electronics and Photonics XX; PC1289508 (2024) https://doi.org/10.1117/12.3000901
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
This talk reviews the research on InAs/InAsSb type-II superlattices and applications to IR lasers and photodetectors with the following highlights: 1) Review of the study of InAs/InAsSb T2SL and its application to IR lasers and photodetectors in the 90’s. 2) Long minority carrier lifetimes were observed in MWIR and LWIR InAs/InAsSb T2SL. 3) Pressure-dependent photoluminescence experiments were conducted on a MWIR InAs/InAsSb T2SL structure to provide evidence for a defect level above the conduction band edge of InAs. 4) First InAs/InAsSb T2SL nBn photodetectors were demonstrated to cover both MWIR and LWIR bands. 5) Hole mobilities were measured.
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Yong-Hang Zhang "Material properties and applications of InAs/InAsSb type-II superlattice in IR lasers and photodetectors", Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC1289508 (9 March 2024); https://doi.org/10.1117/12.3000901
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KEYWORDS
Photodetectors
Infrared lasers
Long wavelength infrared
Mid-IR
Superlattices
Materials properties
Photoluminescence
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