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7 June 2024 Graphene diode-based type-II superlattice infrared photodetectors
Shoichiro Fukushima, Masaaki Shimatani, Manabu Iwakawa, Shinpei Ogawa
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Proceedings Volume 13046, Infrared Technology and Applications L; 130460T (2024) https://doi.org/10.1117/12.3012749
Event: SPIE Defense + Commercial Sensing, 2024, National Harbor, Maryland, United States
Abstract
Graphene-based infrared photodetectors are promising devices that exploit the unique optoelectronic properties of graphene, including its broadband light absorption characteristics, rapid response, and high chemical stability. However, graphene exhibits a low absorbance (2.3%), which limits its photoresponsivity. This paper introduces sensitivity-enhanced InAs/GaInSb type-II superlattice (T2SL) infrared photodetectors fabricated using a graphene diode structure. The devices consist of graphene diodes and InAs/GaInSb SLs grown via chemical vapor deposition. The T2SL structure is employed for both photocarrier supply source and carrier density modulation of the graphene diodes to improve the sensitivity of the devices. The dark current in the graphene diode device is reduced to less than 1%, which is lower than that in the GFET device, and the responsivity of the devices is significantly enhanced using the photogating effect. These highly sensitive and low-dark-current devices are expected to promote the development of high-performance graphene-based image sensors.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Shoichiro Fukushima, Masaaki Shimatani, Manabu Iwakawa, and Shinpei Ogawa "Graphene diode-based type-II superlattice infrared photodetectors", Proc. SPIE 13046, Infrared Technology and Applications L, 130460T (7 June 2024); https://doi.org/10.1117/12.3012749
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KEYWORDS
Graphene
Photodetectors
Infrared imaging
Type II superlattice infrared photodetectors
Superlattices
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