On-chip, ultra-low voltage GaN vacuum nanoelectronics

George T. Wang; Keshab R. Sapkota; A. Alec Talin; Francois Leonard; Brendan P. Gunning; Gyorgy Vizkelethy

doi:10.1117/12.2647038

24 March 2023 On-chip, ultra-low voltage GaN vacuum nanoelectronics

George T. Wang, Keshab R. Sapkota, A. Alec Talin, Francois Leonard, Brendan P. Gunning, Gyorgy Vizkelethy

Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC124300F (2023) https://doi.org/10.1117/12.2647038
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

We present the fabrication and operation of GaN vacuum nanodiodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. Experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, and radiation environments are discussed. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be shown. These results provide key new insights into the behavior and potential of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.

Conference Presentation

Citation Download Citation

George T. Wang, Keshab R. Sapkota, A. Alec Talin, Francois Leonard, Brendan P. Gunning, and Gyorgy Vizkelethy "On-chip, ultra-low voltage GaN vacuum nanoelectronics", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300F (24 March 2023); https://doi.org/10.1117/12.2647038

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