High-performance GaN nanoscale vacuum electron devices in air

Keshab R. Sapkota; A. Alec Talin; Francois Leonard; Barbara A. Kazanowska; Brendan P. Gunning; Kevin S. Jones; George T. Wang

doi:10.1117/12.2583118

5 March 2021 High-performance GaN nanoscale vacuum electron devices in air

Keshab R. Sapkota, A. Alec Talin, Francois Leonard, Barbara A. Kazanowska, Brendan P. Gunning, Kevin S. Jones, George T. Wang

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861D (2021) https://doi.org/10.1117/12.2583118
Event: SPIE OPTO, 2021, Online Only

Abstract

Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.

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Citation Download Citation

Keshab R. Sapkota, A. Alec Talin, Francois Leonard, Barbara A. Kazanowska, Brendan P. Gunning, Kevin S. Jones, and George T. Wang "High-performance GaN nanoscale vacuum electron devices in air", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861D (5 March 2021); https://doi.org/10.1117/12.2583118

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