Presentation
4 October 2022 Suppressing optical losses of hydrogenated amorphous silicon for dielectric metasurfaces working at the visible frequencies, and revealing its structural disorder. (Conference Presentation)
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Abstract
Dielectric metasurfaces working at visible frequencies have been steadily investigated to realize practical flat optical components. However, recently investigated dielectrics, TiO2 and GaN suffer high fabrication costs since a precursor of TiO2 is expensive, and GaN requires two-step etching process. Here, this work suggests optical-loss-suppressed hydrogenated amorphous silicon (a-Si:H) for functional metasurfaces. Optical losses in the visible frequencies are manipulated by adjusting deposition conditions of plasma-enhanced chemical vapor deposition. Optical properties of a-Si:H are optimized for geometric metasurfaces, and it exhibits a high refractive index over 3.0 with low extinction coefficient (<0.1). Using them, highly efficient beam-steering metasurfaces, encapsulated metalenses, and bright structural coloration has been demonstrated. Considering that our manipulation efficiency approaches 42%, 65%, and 75% at the wavelength of 450, 532, 635 nm, it will be dominant materials for a functional photonic platform with low-fabrication costs.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Younghwan Yang, Gwanho Yoon, Sunghak Park, Ki Tae Nam, and Junsuk Rho "Suppressing optical losses of hydrogenated amorphous silicon for dielectric metasurfaces working at the visible frequencies, and revealing its structural disorder. (Conference Presentation)", Proc. SPIE PC12202, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XIX, PC1220206 (4 October 2022); https://doi.org/10.1117/12.2632722
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KEYWORDS
Dielectrics

Visible radiation

Amorphous silicon

Plasma enhanced chemical vapor deposition

Refractive index

Gallium nitride

Silicon

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