Defect inspection and printability study for 14 nm node and beyond photomask

Kazunori Seki; Masashi Yonetani; Karen Badger; Dan J. Dechene; Shinji Akima

doi:10.1117/12.2243514

5 October 2016 Defect inspection and printability study for 14 nm node and beyond photomask

Kazunori Seki, Masashi Yonetani, Karen Badger, Dan J. Dechene, Shinji Akima

Proceedings Volume 9985, Photomask Technology 2016; 99851Y (2016) https://doi.org/10.1117/12.2243514
Event: SPIE Photomask Technology, 2016, San Jose, California, United States

Abstract

Two different mask inspection techniques are developed and compared for 14 nm node and beyond photomasks, High resolution and Litho-based inspection. High resolution inspection is the general inspection method in which a 19x nm wavelength laser is used with the High NA inspection optics. Litho-based inspection is a new inspection technology. This inspection uses the wafer lithography information, and as such, this method has automatic defect classification capability which is based on wafer printability. Both High resolution and Litho-based inspection methods are compared using 14 nm and 7 nm node programmed defect and production design masks. The defect sensitivity and mask inspectability is compared, in addition to comparing the defect classification and throughput. Additionally, the Cost / Infrastructure comparison is analyzed and the impact of each inspection method is discussed.

Citation Download Citation

Kazunori Seki, Masashi Yonetani, Karen Badger, Dan J. Dechene, and Shinji Akima "Defect inspection and printability study for 14 nm node and beyond photomask", Proc. SPIE 9985, Photomask Technology 2016, 99851Y (5 October 2016); https://doi.org/10.1117/12.2243514

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