Additive chemistry and distributions in NTD photoresist thin films

James Thackeray; Chang-Young Hong; Michael B. Clark Jr.

doi:10.1117/12.2219743

25 March 2016 Additive chemistry and distributions in NTD photoresist thin films

James Thackeray, Chang-Young Hong, Michael B. Clark Jr.

Proceedings Volume 9779, Advances in Patterning Materials and Processes XXXIII; 97791B (2016) https://doi.org/10.1117/12.2219743
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The lithographic performance of photoresists is a function of the vertical distribution of formulation components, such as photoacid generator (PAG) molecules, in photoresist thin films and how these components undergo chemical modification and migrate within the film during the lithography processing steps. This paper will discuss how GCIB-SIMS depth profiles were used to monitor the PAG and quencher base distributions before and after exposure and post-exposure bake processing steps for different PAG/photoresist formulations. The authors show that the use of surface active quencher in an NTD photoresist leads to better resist profiles, superior DOF and better OPC performance.

Citation Download Citation

James Thackeray, Chang-Young Hong, and Michael B. Clark Jr. "Additive chemistry and distributions in NTD photoresist thin films", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97791B (25 March 2016); https://doi.org/10.1117/12.2219743

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