Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission

Stacy J. Kowsz; Christopher D. Pynn; Feng Wu; Robert M. Farrell; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1117/12.2209661

26 February 2016 Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission

Stacy J. Kowsz, Christopher D. Pynn, Feng Wu, Robert M. Farrell, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Author Affiliations +

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97481Z (2016) https://doi.org/10.1117/12.2209661
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We report a semipolar III-nitride device in which an electrically injected blue light emitting diode optically pumps monolithic long wavelength emitting quantum wells (QWs) to create polarized white light. We have demonstrated an initial device with emission peaks at 440 nm and 560 nm from the electrically injected and optically pumped QWs, respectively. By tuning the ratio of blue to yellow, white light was measured with a polarization ratio of 0.40. High indium content InGaN is required for long wavelength emission but is difficult to achieve because it requires low growth temperatures and has a large lattice mismatch with GaN. This device design incorporates optically pumped QWs for long wavelength emission because they offer advantages over using electrically injected QWs. Optically pumped QWs do not have to be confined within a p-n junction, and carrier transport is not a concern. Thus, thick GaN barriers can be incorporated between multiple InGaN QWs to manage stress. Optically pumping long wavelength emitting QWs also eliminates high temperature steps that degrade high indium content InGaN but are required when growing p-GaN for an LED structure. Additionally, by eliminating electrical injection, the doping profile can instead be engineered to affect the emission wavelength. We discuss ongoing work focused on improving polarized white light emission by optimizing the optically pumped QWs. We consider the effects of growth conditions, including: trimethylindium (TMI) flow rate, InGaN growth rate, and growth temperature. We also examine the effects of epitaxial design, including: QW width, number of QWs, and doping.

Citation Download Citation

Stacy J. Kowsz, Christopher D. Pynn, Feng Wu, Robert M. Farrell, James S. Speck, Steven P. DenBaars, and Shuji Nakamura "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481Z (26 February 2016); https://doi.org/10.1117/12.2209661

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
18 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum wells

Indium gallium nitride

Gallium nitride

Indium

Optical pumping

Blue light emitting diodes

Light emitting diodes

Show All Keywords

Keywords/Phrases

Search In:

Publication Years