InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer

F. R. Hu; Y. J. Wang; H. B. Zhu; Z. C. Liang

doi:10.1117/12.2001126

27 November 2012 InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer

F. R. Hu, Y. J. Wang, H. B. Zhu, Z. C. Liang

Proceedings Volume 8555, Optoelectronic Devices and Integration IV; 85551W (2012) https://doi.org/10.1117/12.2001126
Event: Photonics Asia, 2012, Beijing, China

Abstract

Homoepitaxial grown InGaN/GaN p-i-n junction was deposited on GaN/Si template with AlN/GaN supperlattice as interlayer by molecular beam epitaxy. Different surface microstructure of the p-GaN was affected by the amount of Mg flux. Light-emitting diode was fabricated from the p-i-n junction. The crystal properties of InGaN/GaN p-i-n junction and the related light-emitting diode properties were investigated.

Citation Download Citation

F. R. Hu, Y. J. Wang, H. B. Zhu, and Z. C. Liang "InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551W (27 November 2012); https://doi.org/10.1117/12.2001126

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