Paper
16 August 1988 Rapid Isothermal Processing (RIP) Of Dielectrics
R. Singh, F. Radpour
Author Affiliations +
Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947394
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Rapid isothermal processing (RIP) based on incoherent sources of light has emerged as a major semiconductor processing technique. In this paper, a review of our own and other works on the RIP of dielectrics is presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Singh and F. Radpour "Rapid Isothermal Processing (RIP) Of Dielectrics", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947394
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Dielectrics

Annealing

Oxides

Silicon

Oxidation

Semiconductors

Interfaces

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