Improving on-wafer CD correlation analysis using advanced diagnostics and across-wafer light-source monitoring

Paolo Alagna; Omar Zurita; Gregory Rechtsteiner; Ivan Lalovic; Joost Bekaert

doi:10.1117/12.2047449

4 April 2014 Improving on-wafer CD correlation analysis using advanced diagnostics and across-wafer light-source monitoring

Paolo Alagna, Omar Zurita, Gregory Rechtsteiner, Ivan Lalovic, Joost Bekaert

Author Affiliations +

Proceedings Volume 9052, Optical Microlithography XXVII; 905228 (2014) https://doi.org/10.1117/12.2047449
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

With the implementation of multi-patterning ArF-immersion for sub 20nm integrated circuits (IC), advances in equipment monitoring and control are needed to support on-wafer yield performance. These in-situ equipment monitoring improvements, along with advanced litho-cell corrections based on on-wafer measurements, enable meeting stringent overlay and CD control requirements for advanced lithography patterning. The importance of light-source performance on lithography pattering (CD and overlay) has been discussed in previous publications.^[1-3] Recent developments of Cymer ArF light-source metrology and on-board monitoring enable end-users to detect, for each exposed wafer, changes in the near-field and far-field spatial profiles and polarization performance, ^[4-6]in addition to the key ‘optical’ scalar parameters, such as bandwidth, wavelength and energy. The major advantage of this capability is that the key performance metrics are sampled at rates matched to wafer performance, e.g. every exposure field across the wafer, which is critical for direct correlation with on-wafer performance for process control and excursion detection.

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Paolo Alagna, Omar Zurita, Gregory Rechtsteiner, Ivan Lalovic, and Joost Bekaert "Improving on-wafer CD correlation analysis using advanced diagnostics and across-wafer light-source monitoring", Proc. SPIE 9052, Optical Microlithography XXVII, 905228 (4 April 2014); https://doi.org/10.1117/12.2047449

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