Mr. Ivan Lalovic Profile

Ivan Lalovic

Founder and Chief Engineer at Gybe LLC

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Author

Publications (23)

Proceedings Article | 4 April 2014 Paper

Improving on-wafer CD correlation analysis using advanced diagnostics and across-wafer light-source monitoring

Paolo Alagna, Omar Zurita, Gregory Rechtsteiner, Ivan Lalovic, Joost Bekaert

Proceedings Volume 9052, 905228 (2014) https://doi.org/10.1117/12.2047449

KEYWORDS: Semiconducting wafers, Optical lithography, Critical dimension metrology, Modulation, Lithography, Metrology, Wafer-level optics, Scatterometry, Double patterning technology, Photomasks

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Proceedings Article | 12 April 2013 Paper

Lithography imaging control by enhanced monitoring of light source performance

Paolo Alagna, Omar Zurita, Ivan Lalovic, Nakgeuon Seong, Gregory Rechsteiner, Joshua Thornes, Koen D'havé, Lieve Van Look , Joost Bekaert

Proceedings Volume 8683, 86830S (2013) https://doi.org/10.1117/12.2013213

KEYWORDS: Semiconducting wafers, Lithography, Optical lithography, Metrology, Polarization, Light sources, Critical dimension metrology, Scanners, Control systems, Lithographic illumination

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Proceedings Article | 13 March 2012 Paper

Process requirements for pitch splitting LELE double patterning at advanced logic technology node

R. Peng, I. Huang, H. Liu, H. J. Lee, John Lin, Arthur Lin, Allen Chang, Benjamin Szu-Min Lin, Ivan Lalovic

Proceedings Volume 8326, 83260X (2012) https://doi.org/10.1117/12.916420

KEYWORDS: Double patterning technology, Critical dimension metrology, Etching, Lithography, Optical lithography, Photomasks, Photoresist materials, Logic, Optical simulations, Cadmium

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Proceedings Article | 23 March 2011 Paper

Focus drilling for increased process latitude in high-NA immersion lithography

Ivan Lalovic, Jason Lee, Nakgeuon Seong, Nigel Farrar, Michiel Kupers, Hans van der Laan, Tom van der Hoeff, Carsten Kohler

Proceedings Volume 7973, 797328 (2011) https://doi.org/10.1117/12.882391

KEYWORDS: Laser drilling, Lithography, Metrology, Semiconducting wafers, Electroluminescence, Optical lithography, Immersion lithography, Critical dimension metrology, Photomasks, Chromatic aberrations

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Proceedings Article | 4 March 2010 Paper

Laser bandwidth effect on overlay budget and imaging for the 45 nm and 32nm technology nodes with immersion lithography

Umberto Iessi, Michiel Kupers, Elio De Chiara, Pierluigi Rigolli, Ivan Lalovic, G. Capetti

Proceedings Volume 7640, 76402B (2010) https://doi.org/10.1117/12.846552

KEYWORDS: Laser stabilization, Optical simulations, Overlay metrology, Chromatic aberrations, Laser applications, Lithography, Metrology, Distortion, Immersion lithography, Critical dimension metrology

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Proceedings Article | 27 May 2009 Paper

Lithography light source challenges for double patterning and EUVL

Nigel Farrar, Ivan Lalovic, David Brandt, Daniel Brown

Proceedings Volume 7470, 74700D (2009) https://doi.org/10.1117/12.835175

KEYWORDS: Light sources, Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Plasma, Double patterning technology, Tin, Lithography, Scanners, Reflectivity

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Proceedings Article | 16 March 2009 Paper

Modeling laser bandwidth for OPC applications

Christian Zuniga, Kostas Adam, Michael Lam, Ivan Lalovic, Peter De Bisschop

Proceedings Volume 7274, 72741O (2009) https://doi.org/10.1117/12.813869

KEYWORDS: Data modeling, Calibration, Optical proximity correction, Chromatic aberrations, Cadmium, Critical dimension metrology, Laser applications, Systems modeling, Image processing, Laser scanners

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Proceedings Article | 6 March 2009 Paper

Improved model predictability by machine data in computational lithography and application to laser bandwidth tuning

Stefan Hunsche, Qian Zhao, Xu Xie, Robert Socha, Hua-Yu Liu, Peter Nikolsky, Anthony Ngai, Paul van Adrichem, Michael Crouse, Ivan Lalovic

Proceedings Volume 7274, 727405 (2009) https://doi.org/10.1117/12.814644

KEYWORDS: Data modeling, Scanners, Semiconducting wafers, Calibration, Process modeling, Fiber optic illuminators, Model-based design, Optical proximity correction, Photomasks, Computational lithography

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Proceedings Article | 17 October 2008 Paper

Defining a physically accurate laser bandwidth input for optical proximity correction (OPC) and modeling

Ivan Lalovic, Oleg Kritsun, Sarah McGowan, Joseph Bendik, Mark Smith, Nigel Farrar

Proceedings Volume 7122, 71221R (2008) https://doi.org/10.1117/12.801556

KEYWORDS: Optical proximity correction, Lithography, Error analysis, Control systems, Data modeling, Statistical modeling, Systems modeling, Laser stabilization, Optical simulations, Photomasks

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In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian forms compared to using measurement-derived laser fingerprints. In this work, we show that the use of the common analytic functions can induce edge placement errors of several nanometers compared to the measured data and therefore do not offer significant improvement compared to the monochromatic assumption. On the other hand, the highlyaccurate laser spectrum data can be reduced to a manageable number of samples and still result in sub 0.5nm error through pitch and focus compared to measured spectra. We have previously demonstrated that a 23-point approximation to the laser data can be generated from the spectrometry data, which results in less than 0.1nm RMS error even over varied illumination settings. We investigate the further reduction in number of spectral samples down to five points and consider the resulting accuracy and model-robustness tradeoffs. We also extend our analysis as a function of numerical aperture and illumination setting to quantify the model robustness of the physical approximations. Given that adding information about the laser spectrum would primarily impact the model-generation run-times and not the run-times for the OPC implementation, these techniques should be straightforward to integrate with current full-chip OPC flows. Finally, we compare the relative performance of a monochromatic model, a 5-point laser-spectral fingerprint, and two Modified Lorentzian fits in a commercial OPC simulator for a 32nm logic lithography process. The model performance is compared at nominal process settings as well as through dose, focus and mask bias. Our conclusions point to the direction for integration of this approach within the framework of existing EDA tools and flows for OPC model generation and process-variability verification.

SPIE Journal Paper | 1 July 2008

Impact of finite laser bandwidth on the critical dimension of L/S structures

Peter De Bisschop, Ivan Lalovic, Fedor Trintchouk

JM3, Vol. 7, Issue 03, 033001, (July 2008) https://doi.org/10.1117/12.10.1117/1.2964297

KEYWORDS: Critical dimension metrology, Optical simulations, Laser scanners, 3D scanning, Laser stabilization, Scanners, Convolution, Semiconducting wafers, Laser metrology, Laser damage threshold

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Proceedings Article | 30 October 2007 Paper

Fast and accurate laser bandwidth modeling of optical proximity effects

Ivan Lalovic, Oleg Kritsun, Joeseph Bendik, Mark Smith, Chris Sallee, Nigel Farrar

Proceedings Volume 6730, 67301X (2007) https://doi.org/10.1117/12.746594

KEYWORDS: Lithography, Optical simulations, Optical proximity correction, Critical dimension metrology, Laser stabilization, Control systems, Excimer lasers, Calibration, Computer simulations, Photoresist materials

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Proceedings Article | 27 March 2007 Paper

Modeling and performance metrics for longitudinal chromatic aberrations, focus-drilling, and Z-noise: exploring excimer laser pulse-spectra

Mark Smith, Joseph Bendik, Ivan Lalovic, Nigel Farrar, William Howard, Chris Sallee

Proceedings Volume 6520, 65203E (2007) https://doi.org/10.1117/12.714102

KEYWORDS: Lithography, Excimers, Chromatic aberrations, Excimer lasers, Optical simulations, Data modeling, 193nm lithography, Photomasks, Electroluminescence, Performance modeling

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Proceedings Article | 12 May 2005 Paper

RELAX: resolution enhancement by laser-spectrum adjusted exposure

Ivan Lalovic, Nigel Farrar, Kazuhiro Takahashi, Eric Kent, Daniel Colon, German Rylov, Alden Acheta, Koji Toyoda, Harry Levinson

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601002

KEYWORDS: Light sources, Resolution enhancement technologies, Lithography, Image processing, Excimer lasers, Deep ultraviolet, Wavefronts, Photomasks, Lithographic illumination, Colorimetry

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Proceedings Article | 14 May 2004 Paper

Characterization of line-edge roughness in photoresist using an image fading technique

Adam Pawloski, Alden Acheta, Ivan Lalovic, Bruno La Fontaine, Harry Levinson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537103

KEYWORDS: Line edge roughness, Image quality, Image processing, Chemically amplified resists, Critical dimension metrology, Photoresist processing, Photoresist materials, Scanning electron microscopy, Semiconducting wafers, Optical lithography

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A technique was developed to investigate the role of aerial image contrast and image-log-slope (ILS) on the resulting magnitude of line edge roughness (LER) in resist with the goal of determining if the minimization of LER in current state-of-the-art, chemically amplified resist materials was limited by the quality of the projected aerial image or the materials and processing of the resist. The process of image fading was employed as the vehicle for controlled aerial image degradation. By reducing the quality of the aerial image through fading, the image contrast and ILS were decreased in a well-controlled and predictable manner, resulting in increased magnitude of LER. The link between experiment and simulation was made possible by the identification of the iso-fading condition, which in analogy to the iso-focal dose, results in a unique exposure dose for which the critical dimension (CD) of a resist feature does not change with increasing levels of fading. At the iso-fading condition, experimentally measured values for LER were analyzed as a function of the contrast and ILS of the aerial image used for patterning. It was determined that contrast was a poor predictor of the magnitude of LER though variations in feature type or illumination. The change in LER as a function of the ILS, however, produced a common basis for the comparison of LER through variations in line width, pitch, fading, increased background level of light, and illumination conditions. To include the effects of exposure dose on the resulting LER of resist features, the experimentally measured analog of the ILS, the resist edge-log-slope (RELS), was also used to produce a common curve for the evaluation of resist LER. Although overexposure can be used to further increase the ILS of the aerial image at the edge of the printed feature, the magnitude of 3σ LER in PAR735 resist appeared to be limited to a value of approximately 5.0nm in the limit of infinite RELS. This suggested that while the aerial image plays a strong role on determining the magnitude of LER during resist printing, there also exists a fundamental limitation to LER from the resist materials that cannot be improved by further increase in the quality of the aerial image.

Proceedings Article | 26 June 2003 Paper

Image-blur tolerances for 65-nm and 45-nm node IC manufacturing

Ivan Lalovic, Armen Kroyan, Jongwook Kye, Hua-Yu Liu, Harry Levinson

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485510

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Reticles, Image processing, Lithography, Manufacturing, Tolerancing, Nanoimprint lithography, Image quality, Control systems

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The deployment of 157nm lithography for manufacturing of integrated circuits is faced with many challenges. The 65 and 45nm ITRS nodes, in particular, require that the lithographic imaging technology be pursued to its theoretical limits with full use of the strongest resolution enhancement techniques. Stringent demands are therefore placed on the quality of the imaging optics to attain the optimal image fidelity for all critical IC device structures. Besides aberrations and light scatter in projection optics, image quality is also strongly influenced by the dynamics of the wafer and reticle stage. The tradeoffs involved in increasing scan speeds and exposure slit-widths, to achieve the ever-important productivity improvements as well as aberration, distortion, and pulse-energy averaging, must be carefully gauged against the image quality impacts of scan-induced errors. In this work, we present a simulation methodology, based on incoherent image superposition, for treatment of the general aerial image effects of transverse image-blur in two dimensions. Initial simulations and experimental results from state-of-the-art 193nm scanner exposures are discussed. The requirements for the transverse image stability during a step-and-scan exposure are defined in the context of 193nm and 157nm lithography, based on generalized image contrast and process window criteria. Furthermore, careful consideration of actual mask layout (post resolution enhancement and optical proximity correction) is necessary in order to understand the implications on CD control. Additionally, we discuss the contributors to transverse image blur in scan-and-repeat lithography, and show that the fading requirements for 65nm and 45nm node imaging notably differ from predicted exposure set-up and process contributions in manufacturing. The total fading budget, or tolerance, for the 65nm node is 15nm, and less than 10nm for the 45nm node given the present imaging strategy assumptions. This work concludes that image-blur contributors must be well controlled, and as such are enablers of 65nm and 45nm lithographic imaging.

SPIE Journal Paper | 1 April 2003

Understanding chromatic aberration impacts on lithographic imaging

Kafai Lai, Ivan Lalovic, Robert Fair, Armen Kroyan, Christopher Progler, Nigel Farrar, Dennis Ames, Khurshid Ahmed

JM3, Vol. 2, Issue 02, (April 2003) https://doi.org/10.1117/12.10.1117/1.1562929

KEYWORDS: Chromatic aberrations, Image enhancement, Lithography, Excimer lasers, Image processing, Electroluminescence, Optical simulations, Lithographic illumination, Monochromatic aberrations, Deep ultraviolet

Proceedings Article | 30 July 2002 Paper

Influence of laser spatial parameters and illuminator pupil-fill performance on the lithographic performance of a scanner

Stephen Renwick, Steve Slonaker, Ivan Lalovic, Khurshid Ahmed

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474524

KEYWORDS: Fiber optic illuminators, Reticles, Lithography, Scanners, Semiconducting wafers, Laser scanners, 3D scanning, Coded apertures, Digital photography, Critical dimension metrology

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Proceedings Article | 11 March 2002 Paper

Contribution of polychromatic illumination to optical proximity effects in the context of deep-UV lithography

Armen Kroyan, Ivan Lalovic, Nigel Farrar

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458276

KEYWORDS: Optical proximity correction, Lithographic illumination, Lithography, Critical dimension metrology, Excimer lasers, Computer simulations, Chromatic aberrations, Photomasks, Deep ultraviolet, Laser optics

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Proceedings Article | 11 March 2002 Paper

Illumination spectral width impacts on mask error enhancement factor and iso-dense bias in 0.6-NA KrF imaging

Ivan Lalovic, Armen Kroyan, Paolo Zambon, Christopher Silsby, Nigel Farrar

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458263

KEYWORDS: Photoresist materials, Photomasks, Lithography, Critical dimension metrology, Semiconducting wafers, Excimer lasers, Manufacturing, Optical proximity correction, Scanning electron microscopy, Reticles

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Proceedings Article | 14 September 2001 Paper

Effects of 95% integral vs. FWHM bandwidth specifications on lithographic imaging

Armen Kroyan, Ivan Lalovic, Nigel Farrar

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435661

KEYWORDS: Lithography, Metrology, Critical dimension metrology, Computer simulations, Chromatic aberrations, Lithographic illumination, Projection systems, Signal to noise ratio, Cadmium, Nanoimprint lithography

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Proceedings Article | 14 September 2001 Paper

Behavior of lens aberrations as a function of wavelength on KrF and ArF lithography scanners

Mark Terry, Ivan Lalovic, Gregory Wells, Adlai Smith

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435740

KEYWORDS: Scanners, Lithography, Wavefronts, Distortion, Error analysis, Laser scanners, 3D scanning, Interferometers, Colorimetry, Monochromatic aberrations

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Proceedings Article | 14 September 2001 Paper

Investigation of cross-field wavefront aberrations of KrF lithography exposure systems as a function of excimer laser bandwidth

Ivan Lalovic, Armen Kroyan, Nigel Farrar, Dennis Taitano, Paolo Zambon, Adlai Smith

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435655

KEYWORDS: Monochromatic aberrations, Photoresist materials, Wavefronts, Lithography, Excimer lasers, Scanners, Diagnostics, Interferometers, Wavefront aberrations, Control systems

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Proceedings Article | 5 July 2000 Paper

Implementation of an automated feedback focus control methodology for Nikon (NSR) i-line and DUV steppers and scanners

Ivan Lalovic, Joseph Parry, Brett Gwynn, Christopher Silsby

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389073

KEYWORDS: Visualization, Semiconducting wafers, Metrology, Lithography, Feedback control, Diagnostics, Reticles, Deep ultraviolet, Photoresist materials, Scanners

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Showing 5 of 23 publications

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