9nm node wafer defect inspection using visible light

Renjie Zhou; Chris Edwards; Gabriel Popescu; Lynford L. Goddard

doi:10.1117/12.2046451

2 April 2014 9nm node wafer defect inspection using visible light

Renjie Zhou, Chris Edwards, Gabriel Popescu, Lynford L. Goddard

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Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 905017 (2014) https://doi.org/10.1117/12.2046451
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Over the past 2 years, we have developed a common optical-path, 532 nm laser epi-illumination diffraction phase microscope (epi-DPM) and successfully applied it to detect different types of defects down to 20 by 100 nm in a 22nm node intentional defect array (IDA) wafer. An image post-processing method called 2DISC, using image frame 2^nd order differential, image stitching, and convolution, was used to significantly improve sensitivity of the measured images. To address 9nm node IDA wafer inspection, we updated our system with a highly stable 405 nm diode laser. By using the 2DISC method, we detected parallel bridge defects in the 9nm node wafer. To further enhance detectability, we are exploring 3D wafer scanning, white-light illumination, and dark-field inspection.

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Renjie Zhou, Chris Edwards, Gabriel Popescu, and Lynford L. Goddard "9nm node wafer defect inspection using visible light", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905017 (2 April 2014); https://doi.org/10.1117/12.2046451

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KEYWORDS

Semiconducting wafers

Bridges

Inspection

Convolution

Defect detection

Optical filters

Image processing

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