Paper
25 September 2013 Electronic phase transitions in transparent zinc oxide thin films
A. R. Poghosyan, N. R. Aghamalyan, R. Guo, Y. A. Kafadaryan, R. K. Hovsepyan, S. I. Petrosyan
Author Affiliations +
Abstract
The peculiarities of charge carrier transfer mechanism in ZnO films doped by donor or acceptor impurity and metal−dielectric electronic phase transition were investigated. The control parameter of this transition is concentration of interstitial Zn atoms. The films with high concentration of interstitial Zn atoms have high conductivity of metallic type. Air annealing leads to change of conductivity temperature dependence from metallic type to dielectric one.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. R. Poghosyan, N. R. Aghamalyan, R. Guo, Y. A. Kafadaryan, R. K. Hovsepyan, and S. I. Petrosyan "Electronic phase transitions in transparent zinc oxide thin films", Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88471S (25 September 2013); https://doi.org/10.1117/12.2027431
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Annealing

Oxygen

Zinc oxide

Lithium

Transition metals

Semiconductors

Gallium

Back to Top