Burstein shift and UV photoresponse in IBAD-deposited transparent conducting ZnO films

Deheng Zhang; Ruwei Gao; Honglei Ma

doi:10.1117/12.252934

3 October 1996 Burstein shift and UV photoresponse in IBAD-deposited transparent conducting ZnO films

Deheng Zhang, Ruwei Gao, Honglei Ma

Proceedings Volume 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications; (1996) https://doi.org/10.1117/12.252934
Event: Photonics China '96, 1996, Beijing, China

Abstract

A Burstein-Moss shift has been observed in highly transparent conducting zinc oxide (ZnO) films prepared by ion-beam assisted reactive deposition (IBAD). The optical gaps ranged from 3.27 to 4.1 eV increase with an increase in film conductivities and carrier concentrations. An over 773 K annealing reduces conductivities by several orders of magnitude and subsequently narrows the optical gaps from 3.41 to 3.24 eV. When the films are irradiated with a UV light, they exhibit some photoresponse. The observed UV photoresponse can be interpreted using oxygen photodesorption and chemisorption at the surface.

Citation Download Citation

Deheng Zhang, Ruwei Gao, and Honglei Ma "Burstein shift and UV photoresponse in IBAD-deposited transparent conducting ZnO films", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252934

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