Fabrication and characterization of OTFT memory based on DNA gate dielectric

Lijuan Liang; Tomoyashi Yukimoto; Sei Uemura; Toshihide Kamata; Kazuki Nakamura; Norihisa Kobayashi

doi:10.1117/12.2026939

1 October 2013 Fabrication and characterization of OTFT memory based on DNA gate dielectric

Lijuan Liang, Tomoyashi Yukimoto, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Norihisa Kobayashi

Proceedings Volume 8817, Nanobiosystems: Processing, Characterization, and Applications VI; 881705 (2013) https://doi.org/10.1117/12.2026939
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

The bio-organic thin film transistor (BiOTFT) with the DNA and DNA-surfactant complex as a dielectric layer shows memory function. In order to investigate the effect of surfactant structure on the OTFT memory device performance, different kinds of surfactant were introduced. Cetyltrimethylammonium chloride (CTMA), Lauroylcholine chloride (Lau) or Octadecyltrimethylammonium chloride (OTMA) as the cationic surfactant was mixed with DNA to prepare the DNA complex through the electrostatic interaction. In addition, the different molecular weight DNA also has been studied to analyze the effect of DNA chain length on the performance of the physical property. Many kinds of methods including UV-vis, Circular dichiroism (CD) and I-V characteristic have been applied to analyze the property of DNA complex. In conclusion, all of DNA complex with CTMA, OTMA and Lau were revealed to work as the bio-organic thin film transistor memory, and the device fabricated by Lau has the highest ON current and showed better device performance.

Citation Download Citation

Lijuan Liang, Tomoyashi Yukimoto, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, and Norihisa Kobayashi "Fabrication and characterization of OTFT memory based on DNA gate dielectric", Proc. SPIE 8817, Nanobiosystems: Processing, Characterization, and Applications VI, 881705 (1 October 2013); https://doi.org/10.1117/12.2026939

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