TiO2 thin film transistor by atomic layer deposition

Ali K. Okyay; Feyza Oruç; Furkan Çimen; Levent E. Aygün

doi:10.1117/12.2005528

18 March 2013 TiO₂ thin film transistor by atomic layer deposition

Ali K. Okyay, Feyza Oruç, Furkan Çimen, Levent E. Aygün

Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862616 (2013) https://doi.org/10.1117/12.2005528
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this study, TiO₂ films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO₂ films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5^V, subthreshold slope is 0.35 V/dec, I_on/I_off ratios 2.5×106 and mobility value is 0.672 cm²/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO₂ has band to band absorption mechanism.

Citation Download Citation

Ali K. Okyay, Feyza Oruç, Furkan Çimen, and Levent E. Aygün "TiO₂ thin film transistor by atomic layer deposition", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862616 (18 March 2013); https://doi.org/10.1117/12.2005528

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