Cut-process overlay yield model for self-aligned multiple patterning and a misalignment correction technique based on dry etching

Pan Zhang; Yijian Chen

doi:10.1117/12.2010584

29 March 2013 Cut-process overlay yield model for self-aligned multiple patterning and a misalignment correction technique based on dry etching

Pan Zhang, Yijian Chen

Author Affiliations +

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850K (2013) https://doi.org/10.1117/12.2010584
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

In this paper, we present a cut-process overlay yield model for self-aligned multiple patterning and study how its yield will be affected by the overlay errors and cut-hole overhang. A geometric model is developed to identify the yield-related structures and construct the probability-of-failure (POF) functions. A general formula to calculate the cut-process overlay yield is derived using the joint POF function. Our calculation results show that an optimal cut-hole overhang must be found in order to achieve the maximum yield. The scaling tendency of the cut-process overlay yield is also studied, and it is found to be a potential challenge when the half pitch of device features reaches 7nm. The yields of 4-mask 193i and single-mask EUV cut modules are also calculated for a comparison. Moreover, a post-lithography misalignment correction technique based on dry etching is proposed. A geometric tilted etching model is developed to predict the relation between the tilting angle of an etching process and the shifted distance of the etched structure’s mass center.

Citation Download Citation

Pan Zhang and Yijian Chen "Cut-process overlay yield model for self-aligned multiple patterning and a misalignment correction technique based on dry etching", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850K (29 March 2013); https://doi.org/10.1117/12.2010584

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