Paper
12 April 2013 Lithography imaging control by enhanced monitoring of light source performance
Author Affiliations +
Abstract
Reducing lithography pattern variability has become a critical enabler of ArF immersion scaling and is required to ensure consistent lithography process yield for sub-30nm device technologies. As DUV multi-patterning requirements continue to shrink, it is imperative that all sources of lithography variability are controlled throughout the product life-cycle, from technology development to high volume manufacturing. Recent developments of new ArF light-source metrology and monitoring capabilities have been introduced in order to improve lithography patterning control.[1] These technologies enable performance monitoring of new light-source properties, relating to illumination stability, and enable new reporting and analysis of in-line performance.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paolo Alagna, Omar Zurita, Ivan Lalovic, Nakgeuon Seong, Gregory Rechsteiner, Joshua Thornes, Koen D'havé, Lieve Van Look , and Joost Bekaert "Lithography imaging control by enhanced monitoring of light source performance", Proc. SPIE 8683, Optical Microlithography XXVI, 86830S (12 April 2013); https://doi.org/10.1117/12.2013213
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Cited by 7 scholarly publications.
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KEYWORDS
Semiconducting wafers

Lithography

Optical lithography

Metrology

Polarization

Critical dimension metrology

Light sources

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