Understanding CIGS device performances through photoreflectance spectroscopy

Antonin Moreau; David Fuertes-Marron; Irene Artacho; Ludovic Escoubas; Jean-Jacques Simon; Carmen M. Ruiz; Veronica Bermudez

doi:10.1117/12.929784

10 October 2012 Understanding CIGS device performances through photoreflectance spectroscopy

Antonin Moreau, David Fuertes-Marron, Irene Artacho, Ludovic Escoubas, Jean-Jacques Simon, Carmen M. Ruiz, Veronica Bermudez

Author Affiliations +

Proceedings Volume 8470, Thin Film Solar Technology IV; 84700L (2012) https://doi.org/10.1117/12.929784
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

Cu(In_1-x,Ga_x)S₂ was studied using photoreflectance spectroscopy. In this study, efforts are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues such as photoluminescence perturbation, high roughness and scattering are addressed. Dual frequency photoreflectance, where both probe and pump beams are modulated, is proposed here to over come the poor signal to noise ratio. Considering the low electric field regime, material parameters are extracted by employing the third derivative functional form of dielectric functions to fit data. The reliability of the technique is finally tested by measuring PR spectra on a specific 15 x 15 cm² wafer and explanations of PR line-shape evolution on this wafer are discussed.

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Antonin Moreau, David Fuertes-Marron, Irene Artacho, Ludovic Escoubas, Jean-Jacques Simon, Carmen M. Ruiz, and Veronica Bermudez "Understanding CIGS device performances through photoreflectance spectroscopy", Proc. SPIE 8470, Thin Film Solar Technology IV, 84700L (10 October 2012); https://doi.org/10.1117/12.929784

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