Novel OPC flow for the trim-mask lithography

Yasushi Kojima; Akemi Moniwa; Tatsuya Maruyama; Manabu Ishibashi; Hironobu Taoka

doi:10.1117/12.964398

29 June 2012 Novel OPC flow for the trim-mask lithography

Yasushi Kojima, Akemi Moniwa, Tatsuya Maruyama, Manabu Ishibashi, Hironobu Taoka

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84410I (2012) https://doi.org/10.1117/12.964398
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

Novel Optical Proximity Correction (OPC) flow using the new compact lithography model which predicts wafer patterns formed by the trim-mask lithography has been developed. The trim-mask lithography has been indispensable to manufacture the random-logic devices using the leading-edge processes which require double patterning technology (DPT) and/or restricted/reduced design rule (RDR). It is the litho-etch-litho-etch (LELE) DPT in which a trim process, a litho-etch (LE) process, follows one or several LE processes. The trim process is used to remove redundant patterns in order to achieve the final patterns corresponding to design intent after forming periodic and lithography-friendly patterns by the preceding LE processes. In addition, it is used to form the narrow gaps between line ends¹. Since the influence of both the preceding processes and the trim process on the final wafer patterns should be considered through the OPC development, it is necessary to moderate the interference between the OPC developments for the masks and to reduce the increase of required computational resources. The concept of the compact lithography model has been proposed, the results applied to random-logic designs have been shown, and effectiveness of the OPC flow has been discussed.

Citation Download Citation

Yasushi Kojima, Akemi Moniwa, Tatsuya Maruyama, Manabu Ishibashi, and Hironobu Taoka "Novel OPC flow for the trim-mask lithography", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410I (29 June 2012); https://doi.org/10.1117/12.964398

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical proximity correction

Semiconducting wafers

Lithography

Photomasks

Tolerancing

Model-based design

Target detection

Show All Keywords

Keywords/Phrases

Search In:

Publication Years