Integrated advanced hotspot analysis techniques in the post-OPC verification flow

Makoto Miyagi; Peter Brooker; Chander Sawh; Travis Brist; Kunal Taravade

doi:10.1117/12.900609

13 October 2011 Integrated advanced hotspot analysis techniques in the post-OPC verification flow

Makoto Miyagi, Peter Brooker, Chander Sawh, Travis Brist, Kunal Taravade

Proceedings Volume 8166, Photomask Technology 2011; 81663P (2011) https://doi.org/10.1117/12.900609
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

Improvements in compact lithography models and compute resources have allowed EDA suppliers to keep up with the accuracy and turnaround time (TAT) requirements for each new technology node. Compact lithography models are derived from the Hopkins method to calculate the image at the wafer. They consist of the pre-calculated optical kernel set that includes properties of projection and source optics as well as resist effects. The image at the wafer is formed by the convolution of optical kernel set with the mask transmission. The compact model is used for optical proximity correction (OPC) and lithography rule checking (LRC) due to its excellent turnaround time in full chip applications. Leading edge technology nodes, however, are inherently more sensitive to process variation and typically contain more low contrast areas, sometimes resulting in marginal hotspots. In these localized areas, it is desirable to have access to more predictive first principle lithography simulation. The Abbe method for lithography simulation includes full 3D resist models that solves from first principles the reaction/diffusion equation of the post exposure bake to provide the highest accuracy. These rigorous models have the ability to provide added insight into 3D developed profile in resist at the wafer level to assist in the application of OPC and disposition of hotspots found by LRC using compact models. This paper will explore the benefits of a tightly integrated rigorous lithography simulation during LRC hotspot detection step of the post OPC flow. Multiple user flows will be addressed along with methods for automating the flows to maximize the imaging predictability where needed while keeping the impact to turn around time to a minimum.

Citation Download Citation

Makoto Miyagi, Peter Brooker, Chander Sawh, Travis Brist, and Kunal Taravade "Integrated advanced hotspot analysis techniques in the post-OPC verification flow", Proc. SPIE 8166, Photomask Technology 2011, 81663P (13 October 2011); https://doi.org/10.1117/12.900609

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Lithography

3D modeling

Optical proximity correction

Computer simulations

Photomasks

Semiconducting wafers

Wafer-level optics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years