Pattern transfer from the e-beam resist, over the nanoimprint resist and to the final silicon substrate

Jian He; S. Howitz; K. Richter; J. W. Bartha; J. I. Moench

doi:10.1117/12.916285

16 March 2012 Pattern transfer from the e-beam resist, over the nanoimprint resist and to the final silicon substrate

Jian He, S. Howitz, K. Richter, J. W. Bartha, J. I. Moench

Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 83280S (2012) https://doi.org/10.1117/12.916285
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

We developed Fluor-based RIE processes to fabricate nanoimprint template in silicon and to transfer patterns from the imprint resist to the silicon substrate. The etched silicon patterns have slightly tapered and smooth sidewalls. The sidewall angle can be controlled between 85° and 90° by varying the ratio of the used gas. The dimension of the etched structures is identical with the patterns in the resist. We demonstrated line structures in silicon substrate down to 50 nm. The etching rate is over 100 nm per minute and the maximal achieved aspect ratio is more than 10.

Citation Download Citation

Jian He, S. Howitz, K. Richter, J. W. Bartha, and J. I. Moench "Pattern transfer from the e-beam resist, over the nanoimprint resist and to the final silicon substrate", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280S (16 March 2012); https://doi.org/10.1117/12.916285

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