Analysis of multibeam's scalable column for complementary e-beam lithography (CEBL)

Enden D. Liu; Cong Tran; Ted Prescop; David K. Lam

doi:10.1117/12.916117

21 March 2012 Analysis of multibeam's scalable column for complementary e-beam lithography (CEBL)

Enden D. Liu, Cong Tran, Ted Prescop, David K. Lam

Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83231X (2012) https://doi.org/10.1117/12.916117
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

We present an analysis of the performance of an all electro-static electron-beam column designed for CEBL (Complementary Electron Beam Lithography). To meet the requirements of CEBL at advanced technology nodes (16 nm half-pitch and beyond), a beam size of < 20 nm FWHM (Full Width Half Maximum) and overlay accuracy of < 4 nm are needed. Beam current and beam energy must be optimized to achieve these specifications while meeting throughput requirements. In this paper, we present an in-depth analysis of the resolution of Multibeam's electron beam column as a function of beam energy. We focus on an analysis of beam energy below 30 keV, to avoid wafer heating and improve overlay accuracy. The beam size is analyzed with respect to aperture size and current. Spherical aberrations, chromatic aberrations and other effects at various beam energy levels are analyzed. At 7.5 or 5 keV beam energy, the 2 dominating factors in the beam spot size are the image size of the virtual source of the TFE (thermal field emitter) electron gun, chromatic and spherical aberrations. Performance of the column and process window to meet patterning requirements will be discussed.

Citation Download Citation

Enden D. Liu, Cong Tran, Ted Prescop, and David K. Lam "Analysis of multibeam's scalable column for complementary e-beam lithography (CEBL)", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83231X (21 March 2012); https://doi.org/10.1117/12.916117

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