Efficient large volume data preparation for electron beam lithography for sub-45nm node

Kang-Hoon Choi; Manuela Gutsch; Martin Freitag; Christoph Hohle; Luc Martin; Sebastien Bayle; Serdar Manakli; Patrick Schiavone

doi:10.1117/12.897586

13 October 2011 Efficient large volume data preparation for electron beam lithography for sub-45nm node

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Luc Martin, Sebastien Bayle, Serdar Manakli, Patrick Schiavone

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Proceedings Volume 8166, Photomask Technology 2011; 816621 (2011) https://doi.org/10.1117/12.897586
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

A new correction approach was developed to improve the process window of electron beam lithography and push its resolution at least one generation further using the same exposure tool. An efficient combination of dose and geometry modulation is implemented in the commercial data preparation software, called Inscale®, from Aselta Nanographics. Furthermore, the electron Resolution Improvement Feature (eRIF) is tested, which is based on the dose modulation and multiple-pass exposure, for not only overcoming the narrow resist process windows and disability of exposure tool but also more accurate correction of exposure data in the application of sub-35nm regime. Firstly, we are demonstrating the newly developed correction method through the comparison of its test exposure and the one with conventional dose modulation method. Secondly, the electron Resolution Improvement Feature is presented with the test application for complementary exposure and with the application of real design, specifically for sub-30nm nodes. Finally, we discuss the requirements of data preparation for the practical applications in e-beam lithography, especially for future technology nodes.

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Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Luc Martin, Sebastien Bayle, Serdar Manakli, and Patrick Schiavone "Efficient large volume data preparation for electron beam lithography for sub-45nm node", Proc. SPIE 8166, Photomask Technology 2011, 816621 (13 October 2011); https://doi.org/10.1117/12.897586

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KEYWORDS

Modulation

Electron beam lithography

Cadmium sulfide

Algorithm development

Point spread functions

Metals

Critical dimension metrology

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