Dr. Luc Martin Profile

Dr. Luc Martin

Application Engineer at ASELTA Nanographics

SPIE Involvement:

Author

Area of Expertise:

lithography , physics of semi conductors , microelectronics , simulation , programming

I am a engineer in Physics from INSA Toulouse (National Institute of Applied Sciences FRANCE) graduated in 2007. After my diploma I joined the CEA/LETI laboratory where I prepared a thesis on a new writing strategy for electron beam direct write lithography for future technological nodes.
I am now working as an application engineer at ASELTA Nanographics, a start up company from CEA/LETI. We develop a new data preparation software for e-beam lithography (both direct write and mask making). This software covers the complete litho flow from the layout edition to the wafer map and reticle map. It also provides advanced correction strategies to improve the resolution of e-beam tools and reduce the writing time.

Proceedings Article | 12 June 2018 Paper

Demonstration of an effective mask proximity correction for advanced photomask

Kenji Kono, Yasuo Kon, Yasunari Tsukino, Sergei Postnikov, Thiago Figueiro, Luc Martin, Paolo Petroni, Patrick Schiavone

Proceedings Volume 10807, 108070A (2018) https://doi.org/10.1117/12.2501785

KEYWORDS: Calibration, Photomasks, Metals, Model-based design, Manufacturing, Etching, Metrology, Critical dimension metrology, Scanning electron microscopy, Electron beam lithography

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Proceedings Article | 13 July 2017 Paper

Data preparation in the age of curvilinear patterns

Sébastien Bayle, Charles Tiphine, Matthieu Milléquant, Thiago Figueiro, Luc Martin, Sergei Postnikov, Patrick Schiavone

Proceedings Volume 10454, 104540H (2017) https://doi.org/10.1117/12.2280704

KEYWORDS: Photomasks, Lithography, Model-based design, Optical lithography, Photonics, Algorithm development, Semiconductors, Silicon photonics, Databases, Optical proximity correction

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Proceedings Article | 9 September 2013 Paper

Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design

Russell Cinque, Tadashi Komagata, Taiichi Kiuchi, Clyde Browning, Patrick Schiavone, Paolo Petroni, Luc Martin, Thomas Quaglio

Proceedings Volume 8880, 88801F (2013) https://doi.org/10.1117/12.2028944

KEYWORDS: Vestigial sideband modulation, Tolerancing, Photomasks, Line edge roughness, Algorithm development, Point spread functions, Printing, Scanning electron microscopy, Critical dimension metrology, Detection and tracking algorithms

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Proceedings Article | 28 June 2013 Paper

Verification: an enabler for model based data preparation

Patrick Schiavone, Alexandre Chagoya, Luc Martin, Vincent Annezo, Alexis Blanchemain

Proceedings Volume 8701, 87010E (2013) https://doi.org/10.1117/12.2032321

KEYWORDS: Photomasks, Data modeling, Optical proximity correction, Modulation, Neodymium, Model-based design, Image processing, Calibration, Manufacturing, Semiconducting wafers

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Proceedings Article | 30 June 2012 Paper

A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

Patrick Schiavone, Luc Martin, Clyde Browning, Vincent Farys, Frank Sundermann, Shogo Narukawa, Tadahiko Takikawa, Naoya Hayashi

Proceedings Volume 8441, 84411F (2012) https://doi.org/10.1117/12.981609

KEYWORDS: Photomasks, Calibration, Modulation, Manufacturing, Data modeling, Ions, Extreme ultraviolet, Lithography, Scattering, Electroluminescence

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Proceedings Article | 21 March 2012 Paper

Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

Luc Martin, Serdar Manakli, Sebastien Bayle, Jérôme Belledent, Sebastien Soulan, Pablo Wiedemann, Abdi Farah, Patrick Schiavone

Proceedings Volume 8323, 83231W (2012) https://doi.org/10.1117/12.916064

KEYWORDS: Metals, Electron beam lithography, Logic, Electroluminescence, Lithography, Optical lithography, Semiconducting wafers, Maskless lithography, Data modeling, Modulation

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Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria) and MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between the correction strategies. This work will be lead on the most critical layers of the 16nm integrate circuits layouts which are contact and metal 1. Finally the aim of this paper is to demonstrate that a complete data preparation flow including advanced proximity effects corrections, simulation and verification capabilities is available for the maskless lithography at the 16nm node and below, through the direct write version of Inscale®. This data preparation platform is already in use in several laboratories for direct write processes.

Proceedings Article | 14 October 2011 Paper

Efficient large volume data preparation for electron beam lithography for sub-45nm node

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Luc Martin, Sebastien Bayle, Serdar Manakli, Patrick Schiavone

Proceedings Volume 8166, 816621 (2011) https://doi.org/10.1117/12.897586

KEYWORDS: Modulation, Electron beam lithography, Cadmium sulfide, Algorithm development, Point spread functions, Metals, Data corrections, Photomasks, Critical dimension metrology, Optics manufacturing

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Proceedings Article | 4 April 2011 Paper

Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

Luc Martin, Serdar Manakli, Sébastien Bayle, Kang-Hoon Choi, Manuela Gutsch, Jonathan Pradelles, Jessy Bustos

Proceedings Volume 7970, 797019 (2011) https://doi.org/10.1117/12.879059

KEYWORDS: Electroluminescence, Electron beam lithography, Line edge roughness, Electron beam direct write lithography, Lithography, Modulation, Standards development, Semiconducting wafers, Optical lithography, Logic

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Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass production. As microelectronics is now moving towards the 32nm node and beyond, the specifications in terms of dimension control and roughness becomes tighter. In addition, the shrink of the size and pitch of features significantly reduces the process window of lithographic tools. In EBDW, the standard proximity effects corrections only based on dose modulation show difficulties to provide the required Energy Latitude for patterning structures designed below 45nm. A new approach is thus needed to improve the process window of EBDW lithography and push its resolution capabilities. In previous papers, a new writing strategy based on multiple pass exposure has been introduced and optimized to pattern critical dense lines. This new technique consists in adding small electron Resolution Improvement Features (eRIFs) on top of the nominal structures. Then this new design is exposed in two successive passes with optimized doses. Previous studies were led to evaluate this new writing technique and establish rules to optimize the design of the eRIF. Significant improvements have already been demonstrated on SRAM and Logic structures down to the 16nm node. These results were obtained with a tool dedicated to the 45nm node. The next step of this work is thus to automatically implement the eRIF to correct large-scale layouts. In this paper, a new data preparation flow is set up for EBDW lithography. It uses the eRIF solution as a full advanced correction method for critical structures. The specific correction rules established in our previous studies are implemented to improve the CD control and the patterning of corners and line ends. Moreover, the dose and shape of the eRIFs are automatically tuned to best fit the nominal design. This work is done with "INSCALE^®", the new data preparation software from ASELTA Nanographics. This data preparation flow is then applied on layouts down to the 22nm node. Comparisons with the standard dose modulation flow demonstrate that adding eRIFs significantly improves the process window and thus the resolution of e-beam tools. It also shows that the multiple pass exposure technique can be used as a specific correction method on large scale layouts.

Proceedings Article | 1 April 2010 Paper

Multiple pass exposure in e-beam lithography: application to the sub-22nm nodes

L. Martin, S. Manakli, B. Icard, J. Pradelles, R. Orobtchouk, A. Poncet, L. Pain

Proceedings Volume 7637, 76370E (2010) https://doi.org/10.1117/12.846907

KEYWORDS: Electroluminescence, Modulation, Line edge roughness, Electron beam lithography, Semiconducting wafers, Logic, Metals, Etching, Electron beam direct write lithography, Electron beams

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Proceedings Article | 23 September 2009 Paper

Development of multiple pass exposure in electron beam direct write lithography for sub-32nm nodes

L. Martin, S. Manakli, B. Icard, J. Pradelles, R. Orobtchouk, A. Poncet, L. Pain

Proceedings Volume 7488, 74881C (2009) https://doi.org/10.1117/12.829893

KEYWORDS: Electroluminescence, Electron beam direct write lithography, Standards development, Electron beam lithography, Optical lithography, Semiconducting wafers, Electron beams, Lithography, Line edge roughness, Optics manufacturing

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Proceedings Article | 27 May 2009 Paper

New writing strategy in electron beam direct write lithography to improve critical dense lines patterning for sub-45nm nodes

L. Martin, S. Manakli, B. Icard, J. Pradelles, R. Orobtchouk, A. Poncet, L. Pain

Proceedings Volume 7470, 74700R (2009) https://doi.org/10.1117/12.835189

KEYWORDS: Electroluminescence, Line edge roughness, Electron beam lithography, Electron beam direct write lithography, Modulation, Scattering, Optical lithography, Point spread functions, Standards development, Lithography

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