VLSI design of low-leakage single-ended 6T SRAM cell

S. Solanki; F. Frustaci; P. Corsonello

doi:10.1117/12.886851

3 May 2011 VLSI design of low-leakage single-ended 6T SRAM cell

S. Solanki, F. Frustaci, P. Corsonello

Proceedings Volume 8067, VLSI Circuits and Systems V; 80670R (2011) https://doi.org/10.1117/12.886851
Event: SPIE Microtechnologies, 2011, Prague, Czech Republic

Abstract

Aggressive CMOS scaling results in significant increase of leakage current in MOS transistors manufactured in deep submicron regime. Consequently low power SRAM design becomes an important criteria in design of VLSI circuits. In this work, a new six transistor (6T) SRAM cell based on dual threshold voltage and dual power supply techniques, has been proposed for low leakage SRAM design. The proposed cell has been compared to the conventional 6T-SRAM, using the 65 nm technology. Compared to conventional six transistor (6T) SRAM cell, new 6T SRAM cell reduces leakage power consumption by 72.6%. Furthermore, the proposed SRAM cell shows no area overhead and comparable read/ writes speed as compared to conventional 6T SRAM cell.

Citation Download Citation

S. Solanki, F. Frustaci, and P. Corsonello "VLSI design of low-leakage single-ended 6T SRAM cell", Proc. SPIE 8067, VLSI Circuits and Systems V, 80670R (3 May 2011); https://doi.org/10.1117/12.886851

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