Paper
22 March 2011 New 0.75 NA ArF scanning lithographic tool
Lifeng Duan, Jianrui Cheng, Gang Sun, Yonghui Chen
Author Affiliations +
Abstract
A new company in the lithography world, SMEE has developed and produced a prototype wafer exposure tool, with an ArF laser light source. This tool, SMEE SSA600/10, adopted step and scan technology to obtain a large exposure filed and to average optical aberrations for a scanned image to improve CD uniformity and reduce distortion. The maximum numerical aperture is 0.75 and the maximum coherence factor of illumination system is 0.88. The illuminator provides continuously variable conventional and off-axis illumination modes to improve resolution. In this paper, the configuration of the exposure tool is presented and design concepts of the scanner are introduced. We show actual test data such as synchronization accuracy, focus and leveling repeatability, dynamic imaging performance (resolution, depth of focus) and overlay.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lifeng Duan, Jianrui Cheng, Gang Sun, and Yonghui Chen "New 0.75 NA ArF scanning lithographic tool", Proc. SPIE 7973, Optical Microlithography XXIV, 79732D (22 March 2011); https://doi.org/10.1117/12.879376
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Fiber optic illuminators

Reticles

Interferometers

Lithography

Overlay metrology

Imaging systems

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