Paper
15 April 2011 Diffusion of amines from resist to BARC layer
Masamitsu Shirai, Tatsuya Hatsuse, Haruyuki Okamura, Shigeo Kimura, Yasuyuki Nakajima
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Abstract
In chemically amplified (CA) resist systems, photo-chemically generated acid can diffuse in resist matrix and the acid induces the de-protection reaction of resists. To control the rate of the de-protection reaction, small amounts of amines must be added as a quencher. The concentration of amines in resist matrix should be constant during the post-exposure-bake (PEB) treatment. In the practical resist processes, organic bottom anti-reflective coating (BARC) is essentially important to provide reflectivity control for resist patterning. In this study, we have studied the diffusion characteristics of amines from resist layer to BARC layer by bake treatment. The amine concentration in resist layer was estimated using the rate of de-protection reaction of conventional CA resist. It was found that the diffusion rate of amines from resist layer to BARC layer was negligibly low.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masamitsu Shirai, Tatsuya Hatsuse, Haruyuki Okamura, Shigeo Kimura, and Yasuyuki Nakajima "Diffusion of amines from resist to BARC layer", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721O (15 April 2011); https://doi.org/10.1117/12.879039
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KEYWORDS
Diffusion

Silicon

Photoresist processing

Polymers

Semiconducting wafers

Bottom antireflective coatings

Reflectivity

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