Prebake and post-exposure bake effects on the dissolution of AZ-PF

Azalia A. Krasnoperova; Michael T. Reilly; S. Turner; L. Ocola; Franco Cerrina

doi:10.1117/12.154767

15 September 1993 Prebake and post-exposure bake effects on the dissolution of AZ-PF

Azalia A. Krasnoperova, Michael T. Reilly, S. Turner, L. Ocola, Franco Cerrina

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154767
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

We have performed experiments to study the kinetics of dissolution of the positive chemically amplified resist AZ-PF (Hoechst AG). The resist dissolution in exposed regions was shown to have non-linear time dependence, with a delay time strongly dependent on prebake and post- exposure bake conditions. Effect of the presence of a low-solubility surface layer on patterning of submicron features as well as on roughness of the developed film has been demonstrated.

Citation Download Citation

Azalia A. Krasnoperova, Michael T. Reilly, S. Turner, L. Ocola, and Franco Cerrina "Prebake and post-exposure bake effects on the dissolution of AZ-PF", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154767

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