High-gain high-sensitivity resonant Ge/Si APD photodetectors

John E. Bowers; Daoxin Dai; Yimin Kang; Mike Morse

doi:10.1117/12.855030

3 May 2010 High-gain high-sensitivity resonant Ge/Si APD photodetectors

John E. Bowers, Daoxin Dai, Yimin Kang, Mike Morse

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76603H (2010) https://doi.org/10.1117/12.855030
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photodiode, which has a high gain-bandwidth product (e.g., >860GHz at a wavelength of 1310nm). Such a high gain-bandwidth product is attributed to the peak enhancement of the frequency response at the high frequency range. From a small signal analysis, we establish an equivalent circuit model which includes a capacitance parallel connected with an inductance due to the avalanche process. When the APD operates at high bias voltages, the LC circuit provides a resonance in the avalanche, which introduces a peak enhancement.

Citation Download Citation

John E. Bowers, Daoxin Dai, Yimin Kang, and Mike Morse "High-gain high-sensitivity resonant Ge/Si APD photodetectors", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603H (3 May 2010); https://doi.org/10.1117/12.855030

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