Paper
12 March 2009 Application of pixel-based mask optimization technique for high transmission attenuated PSM
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Abstract
Sub-resolution assist features (SRAF) insertion using mask synthesis process based on pixel-based mask optimization schemes has been studied in recent years for various lithographical schemes, including 6% attenuated PSM (AttPSM) with off-axis illumination. This paper presents results of application of the pixelbased optimization technology to 6% and 30% AttPSM mask synthesis. We examine imaging properties of mask error enhancement factor (MEEF), critical dimension (CD) uniformity, and side-lobe printing for random contact hole patterns. We also discuss practical techniques for manipulating raw complex shapes generated by the pixel-based optimization engine that ensure mask manufacturability.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyohei Sakajiri, Alexander Trichkov, Yuri Granik, Eric Hendrickx, Geert Vandenberghe, Monica Kempsell, Germain Fenger, Klaus Boehm, and Thomas Scheruebl "Application of pixel-based mask optimization technique for high transmission attenuated PSM", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72750X (12 March 2009); https://doi.org/10.1117/12.813753
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

SRAF

Semiconducting wafers

Printing

Lithography

Electroluminescence

Source mask optimization

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