Modified trilayer resist approach for ArF immersion lithography

Tae-Hwan Oh; Yunsuk Nam; Suhyun Kim; Minkeun Kwak; Hyungsam Choi; Chansam Chang; Yongchul Kim; Hong-Jae Shin; Nae-In Lee

doi:10.1117/12.814013

19 May 2009 Modified trilayer resist approach for ArF immersion lithography

Tae-Hwan Oh, Yunsuk Nam, Suhyun Kim, Minkeun Kwak, Hyungsam Choi, Chansam Chang, Yongchul Kim, Hong-Jae Shin, Nae-In Lee

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 727314 (2009) https://doi.org/10.1117/12.814013
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

With the aid of ArF immersion lithography, semiconductor device node was extended sub-40nm and numerical aperture (NA) of litho process was exceeded to unity. In this high NA (over 1.0) lithography, however, it is very hard to control reflectivity between resist and substrate because of total reflection of light. To overcome this problem, the necessities of dual bottom antireflective coating (BARC) which have different refractivity became to realize. Trilayer resist process, which has two layers of spin-on hard mask (SOH) composed of silicon and carbon, was introduced and applied to various generation of ArF lithography from dry to immersion process. However, Lack of adhesion between photoresist (hydrophobic) and Si-SOH (hydrophilic) layer can cause pattern collapse problem, especially during process of line and space pattern. Herein we studied modified trilayer resist process. We introduced Alkyldisilazane(ADS) treatment after Si- SOH coating in trilayer resist process. Silazane functional groups in ADS react with silanols on the Si-SOH surface and silanols are converted to alkyl siloxane groups. Alkyl siloxane groups are more hydrophobic than silanols, so they can act as adhesion promoter during lithography process. And the hydrophobicity was increased when more hydrocarbons were inserted in ADS. We could improve pattern collapse in trilayer resist process and CD uniformity. This process can be optimized to various generations of ArF immersion lithography and further more.

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Tae-Hwan Oh, Yunsuk Nam, Suhyun Kim, Minkeun Kwak, Hyungsam Choi, Chansam Chang, Yongchul Kim, Hong-Jae Shin, and Nae-In Lee "Modified trilayer resist approach for ArF immersion lithography", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727314 (19 May 2009); https://doi.org/10.1117/12.814013

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KEYWORDS

Head-mounted displays

Silicon

Photoresist processing

Coating

Lithography

Immersion lithography

Semiconducting wafers

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