Paper
4 December 2008 Cluster optimization to improve CD control as an enabler for double patterning
Author Affiliations +
Proceedings Volume 7140, Lithography Asia 2008; 714023 (2008) https://doi.org/10.1117/12.805239
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
Given the increasingly stringent CD requirements for double patterning at the 32nm node and beyond, the question arises as to how best to correct for CD non-uniformity at litho and etch. For example, is it best to apply a dose correction over the wafer while keeping the PEB plate as uniform as possible, or should the dose be kept constant and PEB plate tuning used to correct. In this paper we present experimental data using both of these approaches, obtained on an ASML XT:1900Gi and Sokudo RF3S cluster.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Len Tedeschi, Craig Rosslee, David Laidler, Philippe Leray, and Koen D'havé "Cluster optimization to improve CD control as an enabler for double patterning", Proc. SPIE 7140, Lithography Asia 2008, 714023 (4 December 2008); https://doi.org/10.1117/12.805239
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KEYWORDS
Semiconducting wafers

Etching

Critical dimension metrology

Double patterning technology

Error analysis

Metrology

Polarization

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