Paper
17 October 2008 The study of CD behavior due to transmission control position change within photomask substrate
Author Affiliations +
Abstract
As design rule of memory device is smaller and smaller, the CD uniformity of a photomask become the most important factor to satisfy wafer exposure performance. Once the photomask is made, CD uniformity of the mask can't be changed and if CD uniformity of the mask is not good to use for wafer exposure, we must reject it and make another one again. But, after applying transmission control tool for CD uniformity, we have an extra chance to control mask CD uniformity in one mask and this is very effective for wafer printing result. In this paper, we are going to evaluate the behavior of wafer CD due to transmission control position change within photomask substrate and find the optimum control position for better wafer result.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munsik Kim, Hyemi Lee, Sungha Woo, Kangjoon Seo, Yongkyoo Choi, and Changyeol Kim "The study of CD behavior due to transmission control position change within photomask substrate", Proc. SPIE 7122, Photomask Technology 2008, 712239 (17 October 2008); https://doi.org/10.1117/12.801432
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KEYWORDS
Critical dimension metrology

Photomasks

Semiconducting wafers

Quartz

Control systems

Laser scattering

Optical lithography

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