Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process

Shinji Tarutani; Hideaki Tsubaki; Shinichi Kanna

doi:10.1117/12.771773

26 March 2008 Development of materials and processes for double patterning toward 32- nm node 193- nm immersion lithography process

Shinji Tarutani, Hideaki Tsubaki, Shinichi Kanna

Author Affiliations +

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69230F (2008) https://doi.org/10.1117/12.771773
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patterning process for 32 nm node semiconductor devices. No swelling property was realized in the developing step, in which the dissolution mechanism was discussed. Significantly better LWR and resolution on narrow trench pattern were observed with this negative tone development compared to positive tone development. These results suggest that this negative tone development process is one of the promising candidates for double trench process. Feasibility of double development with negative and positive development process was evaluated as a candidate for pitch frequency doubling process, and quite low k₁ number of 0.23 was obtained.

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Shinji Tarutani, Hideaki Tsubaki, and Shinichi Kanna "Development of materials and processes for double patterning toward 32- nm node 193- nm immersion lithography process", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230F (26 March 2008); https://doi.org/10.1117/12.771773

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