High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting

Fawang Yan; Haiyong Gao; Yang Zhang; Jinmin Li; Yiping Zeng; Guohong Wang; Fuhua Yang

doi:10.1117/12.755420

4 December 2007 High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting

Fawang Yan, Haiyong Gao, Yang Zhang, Jinmin Li, Yiping Zeng, Guohong Wang, Fuhua Yang

Author Affiliations +

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 684103 (2007) https://doi.org/10.1117/12.755420
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

Citation Download Citation

Fawang Yan, Haiyong Gao, Yang Zhang, Jinmin Li, Yiping Zeng, Guohong Wang, and Fuhua Yang "High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684103 (4 December 2007); https://doi.org/10.1117/12.755420

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