Plasma-activated wafer bonding: the new low-temperature tool for MEMS fabrication

V. Dragoi; G. Mittendorfer; C. Thanner; P. Lindner

doi:10.1117/12.721937

15 May 2007 Plasma-activated wafer bonding: the new low-temperature tool for MEMS fabrication

V. Dragoi, G. Mittendorfer, C. Thanner, P. Lindner

Proceedings Volume 6589, Smart Sensors, Actuators, and MEMS III; 65890T (2007) https://doi.org/10.1117/12.721937
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain

Abstract

Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stress-free, aligned substrates without warpage. Achieving wafer level bonding at low temperature employs a little magic and requires new technology development. The cornerstone of low temperature bonding is plasma activation. The plasma is chosen to compliment existing interface conditions and can result in conductive or insulating interfaces. A wide range of materials including semiconductors, glasses, quartz and even plastics respond favorably to plasma activated bonding. The annealing temperatures required to create permanent bonds are typically ranging from room temperature to 400°C for process times ranging from 15-30 minutes and up to 2-3 hours. This new technique enables integration of various materials combinations coming from separate production lines.

Citation Download Citation

V. Dragoi, G. Mittendorfer, C. Thanner, and P. Lindner "Plasma-activated wafer bonding: the new low-temperature tool for MEMS fabrication", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890T (15 May 2007); https://doi.org/10.1117/12.721937

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