Inductively coupled plasma etching of ZnO

Karen J. Nordheden; Mark Dineen; Colin Welch

doi:10.1117/12.714048

20 February 2007 Inductively coupled plasma etching of ZnO

Karen J. Nordheden, Mark Dineen, Colin Welch

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64740P (2007) https://doi.org/10.1117/12.714048
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The etching characteristics of ZnO epitaxial layers in Oxford Plasmalab 100 ICP 180 and 380 systems are investigated. Etch rates are studied as a function of gas composition, ICP power and RF bias power. Surface profilometry and scanning electron microscopy are used to characterize etch rates and surface morphologies. Highlights from other recently published results are also discussed.

Citation Download Citation

Karen J. Nordheden, Mark Dineen, and Colin Welch "Inductively coupled plasma etching of ZnO", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740P (20 February 2007); https://doi.org/10.1117/12.714048

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