Novel mask inspection flow for better defect review and analysis

Kwon Lim; Jin Hyung Park; Dong Hoon Chung; Seong Woon Choi; Woo Sung Han; Hideo Takizawa; Kouji Miyazaki

doi:10.1117/12.681858

20 May 2006 Novel mask inspection flow for better defect review and analysis

Kwon Lim, Jin Hyung Park, Dong Hoon Chung, Seong Woon Choi, Woo Sung Han, Hideo Takizawa, Kouji Miyazaki

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830Z (2006) https://doi.org/10.1117/12.681858
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

Mask inspection plays a pivotal role in current high grade mask making processes and further its importance is getting bigger. The purpose of inspection process is as follows. One is simple sorting of NG masks that have fatal defects with high sensitivity. The other is improvement of total mask manufacturing process and mask quality using defect source analysis. As semiconductor device is getting shrunk down, the influence of mask defect is increasing. Therefore, there are special needs for the efficient use of such expensive inspection machines and the systematic approach of defect analysis. In this paper, we propose novel mask inspection flow to improve mask inspection capacity and systematic defect management. In general, Inspection process is divided by two steps. One is detection of defects and the other is review for defect analysis. Our concept of new inspection flow is adoption of individual defect review system after defect detection in inspection machine. With this new inspection flow using defect review system, we could increase inspection capacity by 30% and set up unified defect analysis hub.

Citation Download Citation

Kwon Lim, Jin Hyung Park, Dong Hoon Chung, Seong Woon Choi, Woo Sung Han, Hideo Takizawa, and Kouji Miyazaki "Novel mask inspection flow for better defect review and analysis", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830Z (20 May 2006); https://doi.org/10.1117/12.681858

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