Paper
24 March 2006 Study of ADI (after develop inspection) using electron beam
Misako Saito, Teruyuki Hayashi, Kaoru Fujihara, Kazuha Saito, Joseph Lin, Ryotaro Midorikawa
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Abstract
In this paper, we established a method to detect defects with a size of 40nm, which is required in the machine to inspect defects on the photo resist of hp65nm generation. First of all, we clarified the mechanism of nuisance generation by electron beam and established a method to control nuisances. Next, we examined the inspection conditions required for detection of minute defects. As a result, the relation between the landing energy, brightness, or contrast and the defect detection ratio were clarified. We successfully detected minute defects of 40nm in the inspection based on a strategies obtained from these examination results to confirm that we established a method to detect minute defects. In addition, we compared defects on photo resist in electron beam inspection and electric defects in the wiring resistance measurement. As a result, the defect distribution on photo resist was found identical to the electric defect distribution. Thus, we proved that the defect inspection on photo resist using electron beam was detecting the killer defects. Therefore, we showed that the resist defect inspection using electron beam is effective for the 65nm generation.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Misako Saito, Teruyuki Hayashi, Kaoru Fujihara, Kazuha Saito, Joseph Lin, and Ryotaro Midorikawa "Study of ADI (after develop inspection) using electron beam", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615248 (24 March 2006); https://doi.org/10.1117/12.656090
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CITATIONS
Cited by 4 scholarly publications and 80 patents.
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KEYWORDS
Defect detection

Electron beams

Inspection

Defect inspection

Scanning electron microscopy

Monte Carlo methods

Photoresist processing

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