Paper
23 December 2005 High-power InGaAs/GaAs VCSEL's two-dimension arrays
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Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 602816 (2005) https://doi.org/10.1117/12.667173
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
Selectively oxidized InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21W at room temperature, resulting in 1KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm, the full width at half-maximum is 0.7 nm, and the far-field divergence angle is about 17o.The characteristics of a single device with a active region diameter of 800μm is compared with that of a 2-D array with active region diameter of individual element of 200μm. These two kinds of devices have the same total lasing area. At the same current injection, the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li Te, Yongqiang Ning, Yanfang Sun, Zhenhua Jin, Liu Yun, and Li-jun Wang "High-power InGaAs/GaAs VCSEL's two-dimension arrays", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 602816 (23 December 2005); https://doi.org/10.1117/12.667173
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KEYWORDS
Vertical cavity surface emitting lasers

Aluminum

Chemical elements

High power lasers

Optical components

Oxidation

Collimation

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