Paper
31 January 2005 980-nm bottom-emitting VCSEL with an output power of 1.95W
Yanfang Sun, Yongqiang Ning, Zhenhua Jin, Li Qin, Changling Yan, Chao Wang, Yun Liu, Getao Tao, Guoqiang Chu, Jun Liu, Lijun Wang
Author Affiliations +
Abstract
The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) with a wavelength of 980nm are described. The device has been fabricated by using oxidation confinement technology. Al2O3 film, instead of SiO2 film is used as the passivation layer to enhance heat dissipation. A distinguished device performance is achieved. The maximum continuous-wave (CW) output power of large aperture devices with active diameters up to 500μm is as high as 1.95W at room temperature, which is to our knowledge the highest value reported for a single device. Size dependence of the output power, the threshold current and the differential resistance is discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanfang Sun, Yongqiang Ning, Zhenhua Jin, Li Qin, Changling Yan, Chao Wang, Yun Liu, Getao Tao, Guoqiang Chu, Jun Liu, and Lijun Wang "980-nm bottom-emitting VCSEL with an output power of 1.95W", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.573195
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KEYWORDS
Vertical cavity surface emitting lasers

Resistance

Reflectivity

Aluminum

Oxidation

Continuous wave operation

High power lasers

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