Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)

A. M. Rasulov; A. A. Dzhurakhalov; F. F. Umarov; Sh. D. Sultonov; A. Khaydarov

doi:10.1117/12.639990

7 December 2006 Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)

A. M. Rasulov, A. A. Dzhurakhalov, F. F. Umarov, Sh. D. Sultonov, A. Khaydarov

Proceedings Volume 5974, International Conference on Charged and Neutral Particles Channeling Phenomena; 59740I (2006) https://doi.org/10.1117/12.639990
Event: International Conference on Charged and Neutral Particles Channeling Phenomena, 2004, Rome, Italy

Abstract

A comparative study of 1-5 keV P+ ions channeling in thin (dZ=5OOÅ) and thick Si(110), SiC(110), GaP(110) and AsGa(110) crystals has been carried out by computer simulation within binary collision approximation. The ion ranges, energy losses, angular and energy distributions, as well as depth profile distribution have been calculated. It was shown that for paraxial part of a beam the main contribution to the total energy losses comes from inelastic ones. It has been established that energy and depth profile distributions depend on width of channel in the direction <110> and mass of target atoms.

Citation Download Citation

A. M. Rasulov, A. A. Dzhurakhalov, F. F. Umarov, Sh. D. Sultonov, and A. Khaydarov "Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)", Proc. SPIE 5974, International Conference on Charged and Neutral Particles Channeling Phenomena, 59740I (7 December 2006); https://doi.org/10.1117/12.639990

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