The role of ion-assisted deposition in PVD

Z. Q. Ma; C. B. Feng; X. Tang; F. Li; B. He; B. B. Shi

doi:10.1117/12.792012

11 March 2008 The role of ion-assisted deposition in PVD

Z. Q. Ma, C. B. Feng, X. Tang, F. Li, B. He, B. B. Shi

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698420 (2008) https://doi.org/10.1117/12.792012
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

An optimal energy interval in ion-assisted deposition of high crystalline films is predicted in the modeling of ion impacting on surface. The result is in good agreement with the presented experiments. The possible application of the evaluation of ion role for the fabrication of potential thin film materials is expected.

Citation Download Citation

Z. Q. Ma, C. B. Feng, X. Tang, F. Li, B. He, and B. B. Shi "The role of ion-assisted deposition in PVD", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698420 (11 March 2008); https://doi.org/10.1117/12.792012

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