A novel mask-based approach to improve low-k1 corner and angle definition in alternating-aperture phase-shift mask structures

Kent H. Nakagawa; David Siefers; Susan MacDonald; Peter D. Buck

doi:10.1117/12.597617

12 May 2005 A novel mask-based approach to improve low-k1 corner and angle definition in alternating-aperture phase-shift mask structures

Kent H. Nakagawa, David Siefers, Susan MacDonald, Peter D. Buck

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Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.597617
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

A novel approach to improve the imaging of the critical magnetic pole structure in the disk drive read head is introduced. A 90-degree sub-resolution opening is added to an alternating aperture phase shift mask to reduce a strong proximity effect in the non-Manhattan tapered section, while maintaining the enhanced printability of the linear segment of the pole region.. Simulation indicates that this opening provides a method to correct the observed distortion in the printed edge without reducing the effectiveness of the altPSM character of the pole itself. We have designed test patterns with this concept and built photomasks to evaluate mask manufacturability and to empirically test the impact of the 90-degree window on final pattern fidelity on wafer. Preliminary results indicate positive correction effects, as well as some potential issues which may be resolved using additional, established correction approaches.

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Kent H. Nakagawa, David Siefers, Susan MacDonald, and Peter D. Buck "A novel mask-based approach to improve low-k1 corner and angle definition in alternating-aperture phase-shift mask structures", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.597617

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KEYWORDS

Photomasks

Semiconducting wafers

Magnetism

Neck

Manufacturing

Scanning electron microscopy

Phase shifts

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