Evaluation of ArF CLM in the sub-100-nm DRAM cell

Ju-Hyung Lee; Dong-Hoon Chung; Ho-Chul Kim; Dong-Seok Nam; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han

doi:10.1117/12.485406

26 June 2003 Evaluation of ArF CLM in the sub-100-nm DRAM cell

Ju-Hyung Lee, Dong-Hoon Chung, Ho-Chul Kim, Dong-Seok Nam, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485406
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Process windows, MEEF (Mask Error Enhancement Factor), flare, aberration effect of the CLM (Cr-less PSM) were measured by the simulations and experiments for the various DRAM cell patterns compared with 6% transmittance HTPSM in the ArF lithography. We designed CLM layouts of sub 100nm node DRAM cells concerning the mask manufacturability, maximizing the NILS (Normalized Image Log Slope) and minimizing the MEEF with a semi-automatic OPC tool. Isolation, line and space and various contact patterns showed increasing process windows compared with HTPSM and this strongly depended on the layout design. Using a 0.75 NA ArF Scanner, CLM showed NILS reduction by about 10% in the presence of lens aberration and flare, which reduced DoF margin by about 0.1~0.2μm depending on the layer. So the critical layers in sub 100 nm node DRAM satisfied 10% of EL (Exposure Latitude) and 0.1 μm of DoF (Depth of Focus) margin. Also 3D mask topographic effect of CLM in the specific layer was discussed.

Citation Download Citation

Ju-Hyung Lee, Dong-Hoon Chung, Ho-Chul Kim, Dong-Seok Nam, Sang-Gyun Woo, Han-Ku Cho, and Woo-Sung Han "Evaluation of ArF CLM in the sub-100-nm DRAM cell", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485406

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KEYWORDS

Photomasks

Nanoimprint lithography

Phase shifts

Chlorine

Manufacturing

Lithography

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